1N5822 Schottky Barrier Diode[Original]

Description of product

1N5822 - Schottky Barrier Diode

General Description


Axial Lead Rectifiers
Employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
  • Extremely Low vF
  • Low Power Loss/High Efficiency
  • Low Stored Charge, Majority Carrier Conduction

*Image shown is a representation only.