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6040c3ac51d1a43119629e75 DRAM 4G, 1.5V, DDR4, 256Mx16, 2400MT/s @ 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/6040c3ac51d1a43119629e77/webp/issi_bga_96_t.png

512Mbx8 & 256Mbx16 DDR4 SDRAM

ISSI 512Mbx8 and 256Mbx16 DDR4 SDRAM are high-speed dynamic random-access memory devices internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups each with four DRAM banks. DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps making them ideal for telecom and networking, automotive, and industrial embedded computing.

TT-MU-870-43QR16256B083RBI
in stock INR 1513.2084
ISSI
1 1
DRAM 4G, 1.5V, DDR4, 256Mx16, 2400MT/s @ 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT

DRAM 4G, 1.5V, DDR4, 256Mx16, 2400MT/s @ 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT

Sku: TT-MU-870-43QR16256B083RBI
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Description of product

512Mbx8 & 256Mbx16 DDR4 SDRAM

ISSI 512Mbx8 and 256Mbx16 DDR4 SDRAM are high-speed dynamic random-access memory devices internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups each with four DRAM banks. DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps making them ideal for telecom and networking, automotive, and industrial embedded computing.

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