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6040c3f8cb74cf3168ba6a22 DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS //cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/6040c3f8cb74cf3168ba6a24/webp/no-image.png

LPDDR4 & LPDDR4X Mobile SDRAM

ISSI LPDDR4 and LPDDR4X SDRAM are low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities. The low-voltage cores and I/O power requirements of these devices make them ideal for mobile applications. The LPDDR4 and LPDDR4X SDRAM offer a clock frequency range from 10MHz to 1600MHz and data rates up to 3200Mbps per I/O. These devices are configured with eight internal banks per channel for concurrent operation. Both the LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and "on-the-fly" burst lengths.

TT-MU-870-IS43LQ1612062BLI
in stock INR 1781.21944
ISSI
1 1

DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS

Sku: TT-MU-870-IS43LQ1612062BLI
₹1,781.22


Sold By: tenettech
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Description of product

LPDDR4 & LPDDR4X Mobile SDRAM

ISSI LPDDR4 and LPDDR4X SDRAM are low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities. The low-voltage cores and I/O power requirements of these devices make them ideal for mobile applications. The LPDDR4 and LPDDR4X SDRAM offer a clock frequency range from 10MHz to 1600MHz and data rates up to 3200Mbps per I/O. These devices are configured with eight internal banks per channel for concurrent operation. Both the LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and "on-the-fly" burst lengths.