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6040c3a0d299c531181784c7 DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/6040c3a0d299c531181784c9/webp/as4c64m16d1a-6bin_t.png

DDR1 Synchronous DRAM

Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

 TT-MU-913-AS4C64M16D1A6BIN
in stock INR 3887.66576
Alliance Memory
1 1
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT

DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT

Sku: TT-MU-913-AS4C64M16D1A6BIN
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Description of product

DDR1 Synchronous DRAM

Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

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