ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.
Subscribe to get Email Updates!
Thanks for subscribe.
Your response has been recorded.
Tenet Technetronics focuses on “Simplifying Technology for Life” and has been striving to deliver the same from the day of its inception since 2007. Founded by young set of graduates with guidance from ardent professionals and academicians the company focuses on delivering high quality products to its customers at the right cost considering the support and lifelong engagement with customers. “We don’t believe in a sell and forget model “and concentrate and building relationships with customers that accelerates, enhances as well as provides excellence in their next exciting project.