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606c45df86caff4446f3f2af Diodes - General Purpose, Power, Switching SIC FAST RECOVERY DIODE //cdn.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/606c45df86caff4446f3f2b1/webp/to-252_dsl.png

RFN10BGE3STL Super Fast Recovery Diode

ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.

TT-MU-755-RFN10BGE3STL
in stockINR 153.57936
1 1
Diodes - General Purpose, Power, Switching SIC FAST RECOVERY DIODE

Diodes - General Purpose, Power, Switching SIC FAST RECOVERY DIODE

Sku: TT-MU-755-RFN10BGE3STL
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Description of product

RFN10BGE3STL Super Fast Recovery Diode

ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.

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